Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization

• DOI: 10.1021/acsami.9b01731
• Publication Date: 2019-06-10T17:57:33Z
• Authors: Giovanni Vescio; Gemma Martín; Albert Crespo-Yepes; Sergi Claramunt; Daniel Alonso; Julian López-Vidrier; Sonia Estradé; Marc Porti; Rosana Rodríguez; Francesca Peiró; Albert Cornet; Albert Cirera; Montserrat Nafría
• Keywords: Resistive touchscreen

Low-power, high-performance metal–insulator–metal (MIM) non-volatile resistive memories based on HfO2 high-k dielectric are fabricated using a drop-on-demand inkjet printing technique as low-cost and eco-friendly method. The characteristics of switching Pt (bottom)/HfO2/Ag (top) stacks Si/SiO2 substrates investigated in order to study the bottom electrode's interaction with layer resulting effects switching. devices show low Set Reset voltages, high ON/OFF current ratio, relatively (∼1 μA), which comparable commercial CMOS memories. In understand mechanism, direct structural observation is carried out by field-emission scanning electron microscopy (FE-SEM) high-resolution transmission (HRTEM) cross-sectioned samples prepared focused ion beam (FIB). addition, energy loss spectroscopy (EELS) inspections discard silver electro-migration effect.