Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications

• DOI: 10.1021/acsami.9b02999
• Publication Date: 2019-03-12T11:06:15Z
• Authors: Jiazhen Sheng; TaeHyun Hong; DongHee Kang; Yeonjin Yi; Jun Hyung Lim; Jin-Seong Park
• Keywords: Deposition

Amorphous InGaZnO semiconductors have been rapidly developed as active charge-transport materials in thin film transistors (TFTs) because of their cost effectiveness, flexibility, and homogeneous characteristics for large-area applications. Recently, InZnSnO (IZTO) with superior mobility (higher than 20 cm2 V–1 s–1) has suggested a promising oxide semiconductor material high-resolution, displays. However, the electrical physical IZTO not fully characterized. In this study, films were grown using novel atomic layer deposition (ALD) supercycle process consisting alternating subcycles single-oxide deposition. By varying number subcycles, it was determined that insertion Sn–O cycle improved reliability IZTO-based TFTs. Specifically, TFT obtained one In–O cycle, Zn–O exhibited best performance (saturation 27.8 s–1 threshold voltage shift 1.8 V after applying positive-bias temperature stress conditions). Next, production rollable flexible devices demonstrated by fabricating ALD-processed TFTs on polymer substrates. The these retained without drastic degradation 240,000 bending cycles. These results indicate ALD technique is effective synthesizing multicomponent electronic applications requiring high mechanical flexibility.