Electron Doping BaZrO3 via Topochemical Reduction

• DOI: 10.1021/acsami.9b06370
• Publication Date: 2019-05-30T16:16:58Z
• Authors: Thomas Orvis; Mythili Surendran; Yang Liu; Shanyuan Niu; Shin Muramoto; Alexander J. Grutter; Jayakanth Ravicha...
• Keywords: 0103 physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences; 0104 chemical sciences

We report the topochemical reduction of epitaxial thin films of the cubic perovskite BaZrO3. Reduction with calcium hydride yields n-type conductivity in the films, despite the wide band gap and low electron affinity of the parent material. X-ray diffraction studies show concurrent loss of out-of-plane texture with stronger reducing conditions. Temperature-dependent transport studies on reduced films show insulating behavior (decreasing resistivity with increasing temperature) with a combination of thermally activated and variable-range hopping transport mechanisms. Time-dependent conductivity studies show that the films are stable over short periods, with chemical changes over the course of weeks leading to an increase in electrical resistance. Neutron reflectivity and secondary ion mass spectrometry indicate that the source of the carriers is most likely hydrogen incorporated from the reducing agent occupying oxygen vacancies and/or interstitial sites. Our studies introduce topochemical reduction as a viable pathway to electron-dope and meta-stabilize low electron affinity and work function materials.