Electron Doping BaZrO3 via Topochemical Reduction

• DOI: 10.1021/acsami.9b06370
• Publication Date: 2019-05-30T16:16:58Z
• Authors: Thomas Orvis; Mythili Surendran; Yang Liu; Shanyuan Niu; Shin Muramoto; Alexander J. Grutter; Jayakanth Ravicha...
• Keywords: Variable-range hopping

We report the topochemical reduction of epitaxial thin films cubic perovskite BaZrO3. Reduction with calcium hydride yields n-type conductivity in films, despite wide band gap and low electron affinity parent material. X-ray diffraction studies show concurrent loss out-of-plane texture stronger reducing conditions. Temperature-dependent transport on reduced insulating behavior (decreasing resistivity increasing temperature) a combination thermally activated variable-range hopping mechanisms. Time-dependent that are stable over short periods, chemical changes course weeks leading to an increase electrical resistance. Neutron reflectivity secondary ion mass spectrometry indicate source carriers is most likely hydrogen incorporated from agent occupying oxygen vacancies and/or interstitial sites. Our introduce as viable pathway electron-dope meta-stabilize work function materials.