Atomic Plane-Vacancy Engineering of Transition-Metal Dichalcogenides with Enhanced Hydrogen Evolution Capability

• DOI: 10.1021/acsami.9b07856
• Publication Date: 2019-06-21T09:12:56Z
• Authors: Cong Wei; Wenzhuo Wu; Hao Li; Xiangcheng Lin; Tong Wu; Yida Zhang; Quan Xu; Lipeng Zhang; Yonghao Zhu; Xinan Yang; Zheng Liu; Qun Xu
• Keywords: 02 engineering and technology; 0210 nano-technology; 7. Clean energy

Introducing anion vacancies on two-dimensional transition-metal dichalcogenides (TMDs) would significantly improve their catalytic activity. In this work, we proposed a solid-phase reduction (SPR) strategy to simultaneously achieve efficient exfoliation and controlled generation of chalcogen TMDs. Consecutive sulfur were successfully created the basal plane bulk MoS2 WS2, interlamellar distances distinctly expanded after SPR treatment (about 16%), which can be conveniently exfoliated by only gentle shaking. The S-vacancy increases hydrogen-evolution reaction activity WS2 nanosheets, with overpotential -238 -241 mV at 10 mA cm-2, respectively. We anticipate that our will supply general platform for development TMD-based electrocatalysts industrial water splitting hydrogen production in near future.