Two-Dimensional/Three-Dimensional Schottky Junction Photovoltaic Devices Realized by the Direct CVD Growth of vdW 2D PtSe2 Layers on Silicon

• DOI: 10.1021/acsami.9b09000
• Publication Date: 2019-07-09T10:28:15Z
• Authors: Mashiyat Sumaiya ...; Hee-Suk Chung; Durjoy Dev; Sonali Das; Tania Roy; Yeonwoong Jung
• Keywords: Tungsten diselenide

Two-dimensional (2D) platinum diselenide (PtSe2) layers are a new class of near-atom-thick 2D crystals in van der Waals-assembled structure similar to previously explored many other transition-metal dichalcogenides (2D TMDs). They exhibit distinct advantages over conventional TMDs for electronics and optoelectronics applications such as metallic-to-semiconducting transition, decently high carrier mobility, low growth temperature. Despite superiority, much their electrical properties have remained mostly unexplored, leaving full technological potential far from being realized. Herein, we report 2D/three-dimensional Schottky junction devices based on vertically aligned metallic PtSe2 integrated Si wafers. We directly grew controlled orientation transport characteristics via low-temperature chemical vapor deposition process investigated PtSe2/Si properties. unveiled comprehensive set material parameters, which decisively confirm the presence excellent junctions, i.e., high-current rectification, small ideality factor, temperature-dependent variation barrier heights. Moreover, observed strong photovoltaic effects extended them realize flexible devices. This study is believed significantly broaden versatility practical futuristic electronic