Heterojunction Photoanode of Atomic-Layer-Deposited MoS2 on Single-Crystalline CdS Nanorod Arrays

• DOI: 10.1021/acsami.9b11178
• Publication Date: 2019-10-03T19:22:38Z
• Authors: Thi Anh Ho; Changdeuck Bae; Jemee Joe; Hyunwoo Yang; Sungsoon Kim; Jong Hyeok Park; Hyunjung Shin
• Keywords: Nanorod; Photocurrent; Chemical bath deposition; Cadmium sulfide

Cadmium sulfide (CdS) is a semiconducting absorber for photoelectrochemical (PEC) hydrogen production with suitable electronic band structures. However, it suffers from severe photocorrosion and rapid charge recombination during the desired PEC reactions. Herein, we describe identification of optimal junction thickness CdS/MoS2 core/sheath heterojunction nanostructures by employing atomic layer deposition (ALD) techniques. ALD-grown MoS2 sheath layers different thicknesses were realized on single-crystalline CdS nanorod (NR) arrays transparent conducting oxide substrates. We further monitored resulting solar H2 evolution performance our photoanodes. The results showed that plays key role in reduction enhanced photocurrent density optimizing separation. A better saturation (∼46%) was obtained 7 nm-thick MoS2@CdS NRs than bare NRs. Moreover, external quantum efficiency increased twofold over pristine structures provides an efficient versatile platform when combining ideal absorbers.