Area-Selective ALD of Ru on Nanometer-Scale Cu Lines through Dimerization of Amino-Functionalized Alkoxy Silane Passivation Films

• DOI: 10.1021/acsami.9b14596
• Publication Date: 2020-01-08T13:32:53Z
• Authors: Ivan Zyulkov; Viraj Madhiwala; Ekaterina Voronina; Matthew Snelgrove; Justin Bogan; Robert O’Connor; Stefan De Gendt; Silvia Armini
• Keywords: Passivation; Diethylenetriamine; Siloxane; Deposition; Surface Modification

The selective deposition of materials on predefined areas a substrate is crucial importance for various applications, such as energy harvesting, microelectronic device fabrication, and catalysis. A representative example area-confined the metal film interconnect material in multilevel metallization schemes CMOS technology. This allows formation structures with standard lithographical techniques while minimizing pattern misalignment overlay improving uniformity across wafer. In this work, area-selective Ru by atomic layer (ALD) investigated using alkoxy siloxane dielectric passivation layers. comparison several silane organic SAM precursors terms ALD ASD performance reported. surface areal concentration molecules demonstrated. According to situ X-ray photoelectron spectroscopy characterization, blocking layers derived from (3-trimethoxysilylpropyl) diethylenetriamine (DETA) precursor have ability polymerize under ALD-compatible temperatures, 250 °C, which leads significant inhibition growth up 400 cycles. At same time, DETA can be selectively removed oxidized Cu rinsing acetic acid, ca. 14 nm no detected DETA-coated RBS. approach successfully tested 50 half-pitch patterned SiO2/Cu lines.