Ferroelectric Gating of Narrow Band-Gap Nanocrystal Arrays with Enhanced Light–Matter Coupling

• DOI: 10.1021/acsphotonics.0c01464
• Publication Date: 2021-01-10T08:59:46Z
• Authors: Charlie Gréboval; Audrey Chu; Debora Vale Magal...; Julien Ramade; Junling Qu; Prachi Rastogi; Adrien Khalili; Sang-Soo Chee; Hervé Aubin; Grégory Vincent; Sara Bals; Christophe Delerue; Emmanuel Lhuillier
• Keywords: narrow band-gap nanocrystals; Physics; field-effect transistor; [CHIM.MATE]Chemical Sciences/Material chemistry; 01 natural sciences; 7. Clean energy; 0104 chemical sciences; infrared; ferroelectric; plasmonic resonator; [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]; Engineering sciences. Technology

As narrow band gap nanocrystals become a considerable building block for the design of infrared sensors, device needs to match their actual operating conditions. While in near and shortwave infrared, room-temperature operation has been demonstrated, longer wavelengths still require low-temperature operations thus specific design. Here, we discuss how field-effect transistors (FETs) can be compatible with detection. To reach this goal, two key developments are proposed. First, report gating nanocrystal films from SrTiO3 which leads high gate capacitance leakage breakdown free 4–100 K range. Second, demonstrate that FET is plasmonic resonator whose role achieve strong light absorption thin film used as channel FET. Combining three resonances, broadband 1.5 3 μm reaching 30% demonstrated. Finally, combining enhanced light–matter coupling, show detectivity 1012 Jones presenting cutoff wavelength 30 operation.