Direct Growth of Hexagonal Boron Nitride on Photonic Chips for High-Throughput Characterization
0301 basic medicine
Condensed Matter - Materials Science
Physics - Instrumentation and Detectors
optically active defects
[PHYS.PHYS.PHYS-GEN-PH] Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]
2d materials
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Instrumentation and Detectors (physics.ins-det)
[PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]
chemical vapor deposition
03 medical and health sciences
imaging platform
[PHYS.PHYS.PHYS-INS-DET] Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]
localization microscopy
[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]
hexagonal boron nitride
defects
Physics - Optics
Optics (physics.optics)
DOI:
10.1021/acsphotonics.1c00165
Publication Date:
2021-06-28T21:10:12Z
AUTHORS (10)
ABSTRACT
Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently developed. Their inherent disadvantage, however, is the necessity to transfer the 2D material from the growth substrate to the imaging chip which introduces contamination, potentially altering the characterization results. Here we present a unique approach to circumvent these shortfalls by directly growing a widely-used 2D material (hexagonal boron nitride, hBN) on silicon nitride chips, and optically characterizing the defects in the intact as-grown material. We compare the direct growth approach to the standard wet transfer method, and confirm the clear advantages of the direct growth. While demonstrated with hBN in the current work, the method is easily extendable to other 2D materials.
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