Efficient Integrated Amplifier-Assisted Laser on Erbium-Doped Lithium Niobate

• DOI: 10.1021/acsphotonics.4c00391
• Publication Date: 2024-04-18T22:03:29Z
• Authors: Jiangwei Wu; Xiongshuo Yan; Xueyi Wang; Tingge Yuan; Chengyu Chen; Hao Li; Yuping Chen; Xianfeng Chen
• Keywords: Erbium

A light source is an indispensable component in on-chip systems. Compared with hybrid or heterogeneous integrated laser, monolithically laser more suitable for high-density photonic circuits because of the capability large-scale manufacturing, lower active-passive coupling loss, and less test complexity. Recent years have seen spark research on rare-earth ion-doped thin film lithium niobate, demonstrations been made both classical quantum chips. However, low output power limited emitting efficiency hinder application chip-scale based this platform. Here a highly efficient assisted by amplifier proposed experimentally prepared Erbium-doped niobate. slope 0.43% linewidth 47.86 kHz are obtained. The maximum 7.989 μW. Our results show viable solution to improve without changing intrinsic material, our design has potential applications being incorporated functional devices such as optical communications, memory, emission.