High Q-Factor and Low Threshold Electrically Pumped Single-Mode Microlaser Based on a Single-Microwire Double-Heterojunction Device

• DOI: 10.1021/acsphotonics.4c00667
• Publication Date: 2024-07-16T15:21:14Z
• Authors: Kai Xu; Peng Wan; Maosheng Liu; Kai Tang; Lijian Li; Tao He; Da Ning Shi; Caixia Kan; Mingming Jiang

The realization of micro/nanosized electrically pumped laser diodes, which show unique advantages including minimized footprint, ultralow threshold, energy-efficiency, and single-frequency characteristics, is hoped to feature as an indispensable unit in optoelectronic photonic integrated circuits. Herein, we present a single-mode microlaser diode driven by electricity. This comprises n-type AlGaN film coated with SnO2 nanolayer, Pt nanoparticle-modified ZnO microwire via Ga impurity (PtNPs@ZnO:Ga MW), Pt/MgO bilayer, p-GaN substrate. device demonstrates distinct double-heterojunction (n–n–p) enabling it lase at 387.3 nm. line width tremendously reduced about 0.05 nm, yielding laser's quality (Q)-factor approaching 7746. carefully designed double heterostructure allows one achieve superinjection current, accompanied the efficient confinement injected charge carriers photons MW cavity. As modified using PtNPs specific dimensions, dynamic modulation lasing modes ranging from multimode operation achieved. Such methodical design assembly could open up new technological avenues for constructing high-performance diodes upon electrical pump. We expect that this research will advance development microlasers desired performance robust applications.