Integration of InGaN/GaN Microrod Light Emitting Diodes on Flexible and Peelable Substrate via Dielectrophoretic Alignments

• DOI: 10.1021/acsphotonics.4c02016
• Publication Date: 2024-12-27T15:41:12Z
• Authors: Pil-Kyu Jang; Yeong-Hoon Cho; Periyayya Uthirak...; Soyeon Park; Sangbum Kim; Seungjae Baek; Taehwan Kim; In-Hwan Lee
• Keywords: Flexible display; Active layer

Flexible GaN-based microlight emitting diodes (μ-LEDs) are making a significant impact in emerging wearable technology due to their excellent performance, characterized by smaller size, fast response, low power consumption, and high luminance. However, most recent studies have focused on the separation alignment of individual μ-LEDs rigid substrates, rather than flexible substrates. This study reports fabrication, separation, horizontal rod-shaped InGaN/GaN onto an interdigitated pattern using dielectrophoresis (DEP) technique substrate. A low-surface-energy polytetrafluoroethylene layer is introduced beneath polyimide layer, enabling physical peel-off from maximum efficiency 82.3% achieved substrate via conventional DEP with sinusoidal electric field at 1 MHz. The fabricated horizontally aligned μ-LED (FHAL) chip transferred carbon/copper tape for investigating optical electrical characteristics. FHAL exhibits consistent brightness, current–voltage, electroluminescence characteristics even under bending deformation states radius curvature as small 4.5 mm. EL spectra show lower full width half-maximum 23 nm when operated 10 V, indicating superior color saturation compared ultrathin blue organic LEDs (50 nm). Furthermore, stable optoelectrical observed after repeated tests up 1000 times. work demonstrates that proposed flexible, pixel brightness pertinent next-generation display technology.