Epsilon-near-Zero Modes and Surface Plasmon Resonance in Fluorine-Doped Cadmium Oxide Thin Films

• DOI: 10.1021/acsphotonics.7b00429
• Publication Date: 2017-07-18T13:18:31Z
• Authors: Evan L. Runnerstrom; Kyle P. Kelley; Edward Sachet; Christopher T. Sh...; Jon-Paul Maria
• Keywords: Electron Mobility

In this report we demonstrate fluorine-doped CdO as a model infrared plasmonic material by virtue of its tunable carrier density, high mobility, and intense extreme-subwavelength plasmon–polariton coupling. Carrier concentrations ranging from 1019 to 1020 cm–3, with electron mobility values 473 cm2/V·s, are readily achieved in epitaxial films over thickness range spanning 50 500 nm. concentration is reactive sputtering an Ar/O2 atmosphere trace quantities CF4. Infrared reflectometry measurements the possibility near-perfect absorption through entire mid-IR spectral range. A companion set reflectivity simulations used predict, understand, optimize epsilon-near-zero modes. context other transparent conductors, exhibits substantially higher thus sharp features. This highlights utility high-mobility conducting oxides materials system for supporting strong, designed light–matter interactions.