On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide

• DOI: 10.1021/acsphotonics.9b00451
• Publication Date: 2019-05-28T18:10:23Z
• Authors: Jun-Feng Wang; Qiang Li; Fei-Fei Yan; He Liu; Guo-Ping Guo; Wei-Ping Zhang; Xiong Zhou; Li-Ping Guo; Zhi-Hai Lin; Jin-Ming Cui; Xiao-Ye Xu; Jin-Shi Xu; Chuan-Feng Li; Guang-Can Guo
• Keywords: Quantum Efficiency

Defects in silicon carbide have been explored as promising spin systems quantum technologies. However, for practical metrology and communication, it is critical to achieve on-demand single spin-defect generation. In this work, we present the generation characterization of shallow vacancies by using different implanted ions annealing conditions. The conversion efficiency a vacancy helium shown be higher than that carbon hydrogen wide fluence range. Furthermore, after optimizing conditions, can increased more 2 times. Due high density generated ensemble defects, sensitivity sensing static magnetic field reached ηB≈23.5μT/Hz, which about 9 times smaller previous results. By carefully further show array with 80%. results pave way an on-demand-generated information processing photonics.