On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide
02 engineering and technology
0210 nano-technology
DOI:
10.1021/acsphotonics.9b00451
Publication Date:
2019-05-28T18:10:23Z
AUTHORS (14)
ABSTRACT
Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical to achieve on-dem...
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