On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide
Quantum Efficiency
DOI:
10.1021/acsphotonics.9b00451
Publication Date:
2019-05-28T18:10:23Z
AUTHORS (14)
ABSTRACT
Defects in silicon carbide have been explored as promising spin systems quantum technologies. However, for practical metrology and communication, it is critical to achieve on-demand single spin-defect generation. In this work, we present the generation characterization of shallow vacancies by using different implanted ions annealing conditions. The conversion efficiency a vacancy helium shown be higher than that carbon hydrogen wide fluence range. Furthermore, after optimizing conditions, can increased more 2 times. Due high density generated ensemble defects, sensitivity sensing static magnetic field reached ηB≈23.5μT/Hz, which about 9 times smaller previous results. By carefully further show array with 80%. results pave way an on-demand-generated information processing photonics.
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