Direct Characterization of Carrier Diffusion in Halide-Perovskite Thin Films Using Transient Photoluminescence Imaging

• DOI: 10.1021/acsphotonics.9b00778
• Publication Date: 2019-08-26T16:03:05Z
• Authors: Wenhao Li; Matthew Shao Ran ...; Srinivas K. Yadav...; Juan David Lizara...; Yuanyuan Zhou; Alexander Zaslavsky; Nitin P. Padture; Rashid Zia
• Keywords: Formamidinium; Triiodide

A high-speed, wide-field photoluminescence (PL) imaging method is established for measuring carrier diffusion in formamidinium lead triiodide (FAPbI3) perovskite thin films. This allows transient PL with a diffraction limited spatial resolution (∼300 nm) and subnanosecond (500 ps) temporal to directly observe reliably estimate diffusivity. Combining this background continuous-wave (CW) illumination, diffusivity found increase the density. effect discussed within context of trap–carrier interactions. Our results suggest that intrinsic value FAPbI3 films may be up factor two higher than measured trap-limited regime under one-sun illumination.