Enhanced Wet-Chemical Etching To Prepare Patterned Silicon Mask with Controlled Depths by Combining Photolithography with Galvanic Reaction

• DOI: 10.1021/ie201996t
• Publication Date: 2011-12-05T18:04:36Z
• Authors: Nannan Sun; Jianming Chen; Chao Jiang; Yajun Zhang; Feng Shi
• Keywords: Isotropic etching; Galvanic cell; Microscale chemistry; Template; Dry etching

We have developed an enhanced wet-chemical method to prepare patterned silicon templates with controlled depths at microscale by combining photolithography electroless metal etching. The masks are obtained in the following procedures: wafers selectively etch through galvanic reactions and result surfaces nanoarrays exposed areas during photolithography; as-etched corroded a mixture etching solution remove nanoarrays, leading templates.