A Resistance-Switchable and Ferroelectric Metal–Organic Framework

• DOI: 10.1021/ja508592f
• Publication Date: 2014-11-24T17:11:59Z
• Authors: Liang Pan; Gang Liu; Hui Li; Sheng Meng; Lei Han; Jie Shang; Bin Chen; Ana E. Platero-Prats; Wei Lu; Xiaodong Zou; Run-Wei Li
• Keywords: Resistive touchscreen; Organic molecules

The ever-emerging demands on miniaturization of electronic devices have pushed the development innovative materials with desired properties. One major endeavor is organic- or organic-inorganic hybrid-based electronics as alternatives supplements to silicon-based devices. Herein we report first observation coexistence resistance switching and ferroelectricity in a metal-organic framework (MOF) material, [InC16H11N2O8]·1.5H2O, denoted RSMOF-1. electrical RSMOF-1 can be turned off repeatedly current ratio 30. A first-principles molecular dynamics simulation suggests that resistive effect related ferroelectric transition N···H-O···H-N bridge-structured dipoles guest water molecules amino-tethered MOF nanochannel. discovery MOFs offers great potential for physical implementation novel next-generation digital processing communication.