Tunable Hydrogen Doping of Metal Oxide Semiconductors with Acid–Metal Treatment at Ambient Conditions

• DOI: 10.1021/jacs.0c00561
• Publication Date: 2020-02-21T10:33:57Z
• Authors: Liyan Xie; Qing Zhu; Guozhen Zhang; Ke Ye; Chongwen Zou; Oleg V. Prezhdo; Zhaowu Wang; Yi Luo; Jun Jiang
• Keywords: 01 natural sciences; 0104 chemical sciences

Hydrogen doping of metal oxide semiconductors is promising for manipulation their properties toward various applications. Yet it quite challenging because requires harsh reaction conditions and expensive catalysts. Meanwhile, acids as a cheap source protons have long been unappreciated. Here, we develop sophisticated acid–metal treatment tunable hydrogenation oxides at ambient conditions. Using first-principles simulations, first show that, with proper work function difference between the oxide, H-diffusion into negatively charged can be well controlled, resulting in H-doping quasi-metal characteristics. This has verified by proof-of-concept experiments that achieved controllable WO3 using Cu hydrochloric acid Further, other (TiO2/Nb2O5/MoO3) metal–acid induced change properties. Our provides way to tailor via H-doping.