Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2
Nanoelectronics
Deposition
DOI:
10.1021/jacs.5b07452
Publication Date:
2015-08-25T18:07:14Z
AUTHORS (12)
ABSTRACT
The controlled synthesis of large-area, atomically thin molybdenum ditelluride (MoTe2) crystals is crucial for its various applications based on the attractive properties this emerging material. In work, we developed a chemical vapor deposition to produce uniform, and highly crystalline few-layer 2H 1T' MoTe2 films. It was found that these two different phases can be grown depending choice Mo precursor. Because structure, as-grown films display electronic are comparable those mechanically exfoliated flakes. Our growth method paves way large-scale application in high-performance nanoelectronics optoelectronics.
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