Analytical Platform To Characterize Dopant Solution Concentrations, Charge Carrier Densities in Films and Interfaces, and Physical Diffusion in Polymers Utilizing Remote Field-Effect Transistors

• DOI: 10.1021/jacs.8b13026
• Publication Date: 2019-02-28T12:20:52Z
• Authors: Hyun-June Jang; Justine Wagner; Hui Li; Qingyang Zhang; Tushita Mukhopadh...; Howard E. Katz
• Keywords: Electron Mobility; Acceptor; Electron acceptor

Characterizing doping effects in a conductive polymer and physical diffusion passive were performed using remote-gate field-effect transistor (RG FET) detection system that was able to measure the electrical potential perturbation of film coupled gate silicon FET. Poly(3-hexylthiophene) (P3HT) doped various concentrations 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) solutions imposed additional positive potentials on P3HT RG, resulting lower threshold voltage (Vth) n-channel Changes Vth related induced hole mobility films by our shifting model for RG We discovered electron-donating even inorganic materials, indium tin oxide gold, showed similar perturbations dependent concentration F4TCNQ overlying as dopant radical anions maximally covered surfaces. This suggests there are limited electroactive sites binding electron donor surfaces which results number charges materials forming dipoles with counteranions. The effect acceptors such 7,7,8,8-tetracyanoquinodimethane tetracyanoethylene compared terms shift analytical tool, differences attributed acceptor size reduction potential. Meanwhile, this FET analysis tool offered means monitoring small molecules, exemplified F4TCNQ, polystyrene, driven gradients. technique allows nondestructive, nonspectroscopic, ambient characterization donor–acceptor interactions at