Synthesis and Electrical Properties of Single Crystalline CrSi2 Nanowires

• DOI: 10.1021/jp071707b
• Publication Date: 2007-06-09T11:01:05Z
• Authors: Kwanyong Seo; Kumar S. K. Varadwaj; Dongkyu Cha; Juneho In; Jiyoung Kim; Jeunghee Park; Bongsoo Kim
• Keywords: SILICIDES; 02 engineering and technology; NANOSTRUCTURES; ARRAYS; CHEMICAL-VAPOR-DEPOSITION; GAN NANOWIRES; METAL; DISILICIDE; COSI NANOWIRES; GROWTH; OXIDES; 0210 nano-technology

Free-standing CrSi2 nanowires are synthesized by a vapor transport based method for the first time. High-quality with hexagonal cross section produced reaction of CrCl2 precursor and Si substrate without using any metal catalyst. We have studied crystal structure electrical properties nanowires. Transmission electron microscopy X-ray diffraction studies confirm single-crystalline nature C40 type structure. Four-probe devices were fabricated focused ion beam equipped nanomanipulator. Measured resistivity nanowire is 0.012 Ω·cm, which close to that bulk CrSi2.