Adsorption Kinetics of Hydrogen Sulfide and Thiols on GaAs (001) Surfaces in a Vacuum
Physisorption
Chemisorption
Dangling bond
DOI:
10.1021/jp075968x
Publication Date:
2008-02-20T10:00:48Z
AUTHORS (2)
ABSTRACT
Adsorption mechanisms of hydrogen sulfide and alkanethiols on GaAs (001) surfaces prepared in a vacuum were studied using first principles calculations. The need for physisorbed precursor was confirmed based energetic arguments molecular dynamics simulations the transition from physisorption to chemisorption state. preference S−Ga bond formation found, resulting weak non-dissociative state formed by overlap sulfur lone pair orbital with an empty Ga dangling bond. Physisorption energies height barrier found be very similar those gold, while main difference gold that remains surface upon S−H cleavage. Obtained results allowed more advanced interpretation experimental data concerning H2S thiol adsorption GaAs.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (37)
CITATIONS (33)
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....