Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene

• DOI: 10.1021/nl100985z
• Publication Date: 2010-08-04T20:48:01Z
• Authors: Guangyu Xu; Carlos M. Torres; Yuegang Zhang; Fei Liu; Emil B. Song; Minsheng Wang; Yi Zhou; Caifu Zeng; Kang L. Wang
• Keywords: Condensed Matter - Materials Science; Condensed Matter - Mesoscale and Nanoscale Physics; 0103 physical sciences; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; 02 engineering and technology; 0210 nano-technology; 01 natural sciences

Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer graphene (SLG) and bilayer graphene (BLG) samples. Contrary to the expected noise increase with the resistance, the noise for SLG decreases near the Dirac point, possibly due to the effects of the spatial charge inhomogeneity. For BLG, a similar noise reduction near the Dirac point is observed, but with a different gate dependence of its noise behavior. Some possible reasons for the different noise behavior between SLG and BLG are discussed.<br/>28 pages, 3 figures + 3 supplement figures<br/>