Defects in Individual Semiconducting Single Wall Carbon Nanotubes: Raman Spectroscopic and in Situ Raman Spectroelectrochemical Study

• DOI: 10.1021/nl102727f
• Publication Date: 2010-10-12T19:47:59Z
• Authors: Martin Kalbac; Ya-Ping Hsieh; Hootan Farhat; Ladislav Kavan; Mario Hofmann; Jing Kong; Mildred S. Dresse...
• Keywords: Nanotubes, Carbon; Electric Conductivity; Molecular Conformation; Equipment Design; 02 engineering and technology; Spectrum Analysis, Raman; Equipment Failure Analysis; Semiconductors; Materials Testing; Particle Size; Crystallization; 0210 nano-technology

Raman spectroscopy and in situ spectroelectrochemistry have been used to study the influence of defects on spectra semiconducting individual single-walled carbon nanotubes (SWCNTs). The were created intentionally part an originally defect-free nanotube, which allowed us analyze how this particular nanotube. formation was followed by that showed D band intensity coming from defective no original same It is shown presence also reduces symmetry-allowed features. Furthermore, changes resonance window upon introduction are analyzed. demonstrated lead both a broadening profile decrease maximum profile. spectroelectrochemical data show doping dependence features taken tested SWCNT.