Single-Photon Emission and Quantum Characterization of Zinc Oxide Defects
Wide-bandgap semiconductor
DOI:
10.1021/nl204010e
Publication Date:
2012-01-16T21:26:31Z
AUTHORS (7)
ABSTRACT
Room temperature single-photon emission and quantum characterization is reported for isolated defects in zinc oxide. The are observed thin films of both in-house synthesized commercial oxide nanoparticles. Emission spectra the red infrared, second-order photon correlation functions, lifetime measurements, count rates presented. Both two- three-state emitters identified. Sub-band gap absorption suggest these vacancy. These results identify a new source single photons readily available wide band semiconductor material which has exceptional electrical, optical, biocompatibility properties.
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