Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma

• DOI: 10.1021/nn3005262
• Publication Date: 2012-02-22T00:06:55Z
• Authors: Yong-Bing Tang; Li-Chang Yin; Yang Yang; Xiang-Hui Bo; Yu-Lin Cao; Hong-En Wang; Wen-Jun Zhang; Igor Bello; Shuit-Tong Lee; Hui-Ming Cheng; Chun-Sing Lee
• Keywords: 02 engineering and technology; 0210 nano-technology

We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy X-ray photoemission analyses graphene reacted showed B atoms are substitutionally incorporated into without segregation domains. The content was adjusted over a range 0-13.85 atom % controlling time, from which effects on quantitatively evaluated. Electrical measurements field-effect transistors show have distinct p-type conductivity current on/off ratio higher than 10(2). Especially, gap is tuned 0 to ~0.54 eV increasing content, leading series modulated properties. believe for predictable may pave way development graphene-based devices.