Tunable Band Gaps and p-Type Transport Properties of Boron-Doped Graphenes by Controllable Ion Doping Using Reactive Microwave Plasma

02 engineering and technology 0210 nano-technology
DOI: 10.1021/nn3005262 Publication Date: 2012-02-22T00:06:55Z
ABSTRACT
We report tunable band gaps and transport properties of B-doped graphenes that were achieved via controllable doping through reaction with the ion atmosphere trimethylboron decomposed by microwave plasma. Both electron energy loss spectroscopy X-ray photoemission analyses graphene reacted showed B atoms are substitutionally incorporated into without segregation domains. The content was adjusted over a range 0-13.85 atom % controlling time, from which effects on quantitatively evaluated. Electrical measurements field-effect transistors show have distinct p-type conductivity current on/off ratio higher than 10(2). Especially, gap is tuned 0 to ~0.54 eV increasing content, leading series modulated properties. believe for predictable may pave way development graphene-based devices.
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