Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires

• DOI: 10.1038/ncomms11405
• Publication Date: 2016-04-20T11:14:28Z
• Authors: Subhajit Biswas; Jessica Doherty; Dzianis Saladukha; Quentin Ramasse; Dipanwita Majumdar; Moneesh Upmanyu; Achintya Singha; Tomasz Ochalski; Michael A. Morris; Justin D. Holmes
• Keywords: Physical sciences; Physical chemistry; Science; Q; Nanotechnology; 02 engineering and technology; 0210 nano-technology; Materials science; Article

Abstract The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation a direct bandgap in conventional indirect elemental semiconductor. Here, we describe fabrication uniform diameter, Ge 1− x Sn alloy nanowires, with incorporation up 9.2 at.%, far excess equilibrium solubility bulk Ge, through catalytic bottom-up growth paradigm using noble metal and catalysts. Metal catalysts permitted greater inclusion nanowires compared Au catalysts, when used during vapour–liquid–solid growth. addition an annealing step close Ge-Sn eutectic temperature (230 °C) cool-down, further facilitated excessive dissolution nanowires. was distributed throughout nanowire lattice no metallic segregation or precipitation at surface within into can be understood terms kinetic trapping model for impurity triple-phase boundary