A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

• DOI: 10.1038/ncomms13497
• Publication Date: 2016-12-08T10:06:08Z
• Authors: Wenjian Liu; Hongxia Zhang; Jin-an Shi; Zhongchang Wang; Cheng Song; Xiangrong Wang; Siyuan Lu; Xiangjun Zhou; Lin Gu; Dmitri V. Louzgui...; Mingwei Chen; Kefu Yao; Na Chen
• Keywords: Magnetic semiconductor; Curie

Abstract Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises new functionalities and device concepts. So far, the so-called diluted attract many attentions, yet it remains challenging increase Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast concept of doping elements into conventional make semiconductors, here we propose oxidize originally ferromagnetic metals/alloys form species We introduce oxygen a metallic glass Co 28.6 Fe 12.4 Ta 4.3 B 8.7 O 46 semiconductor with temperature 600 K. The demonstration p – n heterojunctions electric field control room-temperature ferromagnetism in this material reflects its -type semiconducting character, mobility 0.1 cm 2 V −1 s . Our findings may pave way realize high unusual multifunctionalities.