Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics

• DOI: 10.1038/ncomms15891
• Publication Date: 2017-06-26T09:51:40Z
• Authors: Seongsu Kim; Tae Yun Kim; Kang Hyuck Lee; Tae-Ho Kim; Francesco Arturo ...; Sung Kyun Kim; Ronan Hinchet; Sang-Woo Kim; Christian Falconi
• Keywords: 670; Science; Q; Settore ING-INF/01 - ELETTRONICA; 02 engineering and technology; 0210 nano-technology; Article

Abstract Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators conductors. Moreover, after manufacturing, are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric in very close proximity of As representative materials, use chemical vapour deposition graphene deposited on a SiO 2 /Si substrate. The triboelectric charges, generated by friction with Pt-coated atomic force microscope tip injected through defects, trapped at the air–SiO interface underneath act as ghost floating gates. Tunnelling uniquely permits to create, modify destroy p n regions will spatial resolution microscopes. proof concept, draw rewritable p/n + p/p junctions resolutions small 200 nm. Our results open way time-variant electronics where conductors, be defined demand.