Lead iodide perovskite light-emitting field-effect transistor

• DOI: 10.1038/ncomms8383
• Publication Date: 2015-06-25T10:35:01Z
• Authors: Xin Yu Chin; Daniele Cortecchia; Jun Yin; Annalisa Bruno; Cesare Soci
• Keywords: Optoelectronic Devices and Components; Condensed Matter - Materials Science; Materials Science (cond-mat.mtrl-sci); FOS: Physical sciences; :Science::Physics [DRNTU]; 02 engineering and technology; Light-emitting devices Field-effect transistor Perovskite FET; 7. Clean energy; 01 natural sciences; Article; Solar Cells; 0104 chemical sciences; 0210 nano-technology

AbstractDespite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature.