Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide

• DOI: 10.1038/ncomms8509
• Publication Date: 2015-07-01T12:20:25Z
• Authors: Dehui Li; Rui Cheng; Hailong Zhou; Chen Wang; Anxiang Yin; Yu Chen; Nathan O. Weiss; Yu Huang; Xiangfeng Duan
• Keywords: Molybdenum disulfide

Abstract The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS 2 exhibits a direct bandgap, multilayer is an indirect bandgap semiconductor generally optically inactive. Here we report electric-field-induced strong electroluminescence in . We show that GaN–Al O 3 –MoS –Al -graphene vertical heterojunctions can be created with excellent rectification behaviour. Electroluminescence studies demonstrate prominent excitonic emission over entire junction area. Importantly, efficiency observed comparable to or higher than monolayers. This attributed carrier redistribution from lowest energy points (indirect bandgap) (direct k -space. general other materials including WSe open up new pathway towards dichalcogenide-based optoelectronic devices.