Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared

• DOI: 10.1038/s41377-025-01792-3
• Publication Date: 2025-03-17T02:47:36Z
• Authors: Fan Tan; Chunlu Chang; Nan Zhang; Junru An; Mingxiu Liu; Xingyu Zhao; Mengqi Che; Zhilin Liu; Yaru Shi; Yahui Li; Yanze Feng; Chao Lin; Yuquan Zheng; Dabing Li; Mario Lanza; Shaojuan Li
• Keywords: Neuromorphic engineering; Physisorption

Abstract Neuromorphic computing vision is the most promising technological solution to overcome arithmetic bottleneck in machine applications. All-in-one neuromorphic sensors have been attracting increased attention because they can integrate visual perception, processing, and memory functionalities into one single device. However, limited responsivity data retention time of all-in-one usually hinder their potential multispectral vision, especially near-infrared (NIR) band which contains critical information for pattern recognition. Here, we demonstrate physisorption-assistant optoelectronic synaptic transistors based on Ta 2 NiSe 5 /SnS heterojunction, present tunable functionality broadband (375–1310 nm). We propose a strategy about persistent photoconductivity (PAPPC) effect effectively solve problem detecting storing NIR light information. Under this strategy, our devices were significantly enhanced prolonged from 375 1310 nm. Further, realize multilevel non-volatile through modulation several optical back-gate signals simulate emotion-controlled learning processes, writing-electric erasing, associative learning. Moreover, developed simplified human system color-cognitive perception functions. Our approach offers route creating advanced developing vision.