Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions

• DOI: 10.1038/s41467-018-03003-7
• Publication Date: 2018-02-08T10:53:52Z
• Authors: K. Watanabe; B. Jinnai; S. Fukami; H. Sato; H. Ohno
• Keywords: Tunnel magnetoresistance; Spin-transfer torque; Nanometre; Tunnel junction; Magnetoresistive random-access memory

Abstract Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access memories. Successful implementation depends on simultaneous achievement of low switching current for the magnetization by spin transfer torque and high thermal stability, along with continuous reduction junction size. Perpendicular easy-axis CoFeB/MgO stacks possessing interfacial anisotropy have paved way down to 20-nm scale, below which new approach needs be explored. Here we show that satisfy requirements at ultrafine scale revisiting shape anisotropy, is classical part but has not been fully utilized perpendicular systems. Magnetization solely driven achieved smaller than 10 nm where sufficient stability provided without adopting material This work expected push forward development toward single-digit nm-scale nano-magnetics/spintronics.