Twist angle-dependent conductivities across MoS2/graphene heterojunctions

• DOI: 10.1038/s41467-018-06555-w
• Publication Date: 2018-09-28T10:12:22Z
• Authors: Mengzhou Liao; Ze-Wen Wu; Luojun Du; Tingting Zhang; Zheng Wei; Jianqi Zhu; Hua Yu; Jian Tang; Lin Gu; Yanxia Xing; Rong Yang; Dongxia Shi; Yugui Yao; Guangyu Zhang
• Keywords: Science; Q; 02 engineering and technology; 0210 nano-technology; Article

Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays crucial role in tuning heterostructure properties. Here we report experimental investigation twist angle-dependent conductivities MoS2/graphene van heterojunctions. We found that vertical conductivity heterojunction can be tuned by ∼5 times under configurations, highest/lowest occurs at 0°/30°. Density functional theory simulations suggest this change originates transmission coefficient difference heterojunctions with angles. Our work provides guidance using electronics, especially on reducing contact resistance MoS2 devices as well other TMDCs contacted graphene.