Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
Condensed Matter - Mesoscale and Nanoscale Physics
single electron transistors
Science
graphene
Q
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
FOS: Physical sciences
quantum dots
van der Waals heterostructures
530
Article
DOI:
10.1038/s41467-018-08227-1
Publication Date:
2019-01-10T10:31:40Z
AUTHORS (21)
ABSTRACT
Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties functionalities resulted structures. Thus, planar heterostructures allow p-n junctions between different semiconductors graphene nanoribbons with well-defined edges; in observation superconductivity purely carbon-based systems realisation tunnelling transistors. Here we demonstrate simultaneous use in-plane van Waals to build single electron We grow quantum dots inside matrix hexagonal boron nitride, allows dramatic reduction number localised states along perimeter dots. The nitride tunnel barriers as contacts make our transistors reproducible not dependent on states, opening even larger flexibility when designing future devices.
SUPPLEMENTAL MATERIAL
Coming soon ....
REFERENCES (43)
CITATIONS (48)
EXTERNAL LINKS
PlumX Metrics
RECOMMENDATIONS
FAIR ASSESSMENT
Coming soon ....
JUPYTER LAB
Coming soon ....