Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

• DOI: 10.1038/s41467-018-08227-1
• Publication Date: 2019-01-10T10:31:40Z
• Authors: Gwangwoo Kim; Sung-Soo Kim; Jonghyuk Jeon; Seong In Yoon; Seokmo Hong; Young Jin Cho; Abhishek Misra; Servet Ozdemir; Jun Yin; Davit Ghazaryan; Matthew Holwill; Artem Mishchenko; Daria V. Andreeva; Yong-Jin Kim; Hu Young Jeong; A-Rang Jang; Hyun-Jong Chung; Andre K. Geim; Kostya S. Novoselov; Byeong-Hyeok Sohn; Hyeon Suk Shin
• Keywords: Condensed Matter - Mesoscale and Nanoscale Physics; single electron transistors; Science; graphene; Q; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); FOS: Physical sciences; quantum dots; van der Waals heterostructures; 530; Article

Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties functionalities resulted structures. Thus, planar heterostructures allow p-n junctions between different semiconductors graphene nanoribbons with well-defined edges; in observation superconductivity purely carbon-based systems realisation tunnelling transistors. Here we demonstrate simultaneous use in-plane van Waals to build single electron We grow quantum dots inside matrix hexagonal boron nitride, allows dramatic reduction number localised states along perimeter dots. The nitride tunnel barriers as contacts make our transistors reproducible not dependent on states, opening even larger flexibility when designing future devices.