Precise control of the interlayer twist angle in large scale MoS2 homostructures

• DOI: 10.1038/s41467-020-16056-4
• Publication Date: 2020-05-01T10:02:39Z
• Authors: Mengzhou Liao; Zheng Wei; Luojun Du; Qinqin Wang; Jian Tang; Hua Yu; Fanfan Wu; Jiaojiao Zhao; Xiaozhi Xu; Bo Han; Kaihui Liu; Peng Gao; Tomas Polcar; Zhipei Sun; Dongxia Shi; Rong Yang; Guangyu Zhang
• Keywords: ta213; ta114; Science; Q; 540; ta216; 530; 01 natural sciences; Article; 0104 chemical sciences

Abstract Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications twistronics, it is utmost importance control interlayer twist on large scales. In this work, we report precise in centimeter-scale stacked multilayer MoS 2 homostructures via combination wafer-scale highly-oriented monolayer growth techniques and water-assisted transfer method. We confirm that can continuously change indirect bandgap homostructures, indicated by photoluminescence peak shift. Furthermore, demonstrate stack structure affect electrical properties where 30° yields higher electron mobility. Our work firm basis for development twistronics.