Benchmarking monolayer MoS2 and WS2 field-effect transistors

• DOI: 10.1038/s41467-020-20732-w
• Publication Date: 2021-01-29T11:18:42Z
• Authors: Amritanand Sebastian; Rahul Pendurthi; Tanushree H. Chou...; Joan M. Redwing; Saptarshi Das
• Keywords: Benchmarking; Molybdenum disulfide; Electron Mobility

Abstract Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS 2 and WS films grown using metal-organic chemical vapor deposition process. Our study involves 230 FETs 160 with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well ultra-thin body Si FETs. results show consistent of 2D across 1 × cm chips owing high quality uniform growth TMDs followed by clean transfer onto device substrates. are able demonstrate record carrier mobility 33 V −1 s FETs, which is a 1.5X improvement compared the best reported literature. experimental demonstrations confirm technological viability future integrated circuits.