Ferroelectric-tuned van der Waals heterojunction with band alignment evolution

• DOI: 10.1038/s41467-021-24296-1
• Publication Date: 2021-06-29T10:06:39Z
• Authors: Yan Chen; Xudong Wang; Le Huang; Xiaoting Wang; Wei Jiang; Zhen Wang; Peng Wang; Binmin Wu; Tie Lin; Hong Shen; Zhongming Wei; Weida Hu; Xiangjian Meng; Junhao Chu; Jianlu Wang
• Keywords: Ferroelectric Polymers; Specific detectivity

Abstract Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In specific van heterojunction, the band alignment engineering is crucial and feasible to realize high performance multifunctionality. Here, we design ferroelectric-tuned heterojunction device structure by integrating GeSe/MoS 2 VHJ poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from polarization can effectively modulate of heterojunction. Band transition type II I demonstrated. The combination anisotropic GeSe MoS realizes high-performance polarization-sensitive photodetector exhibiting low dark current approximately 1.5 pA, quick response 14 μs, detectivity 4.7 × 10 12 Jones. Dichroism ratios are also enhanced in spectrum visible near-infrared. has great potential multifunctional detection applications sophisticated light information sensing. More profoundly, valid band-engineering approach creating versatile