Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions

• DOI: 10.1038/s41467-021-27617-6
• Publication Date: 2021-12-15T11:05:44Z
• Authors: Fei Xue; Xin He; Yinchang Ma; Dongxing Zheng; Chenhui Zhang; Lain-Jong Li; Jr-Hau He; Bin Yu; Xixiang Zhang
• Keywords: Memristor; Non-Volatile Memory; Neuromorphic engineering

Ferroelectric memristors have found extensive applications as a type of nonvolatile resistance switching memories in information storage, neuromorphic computing, and image recognition. Their mechanisms are phenomenally postulated the modulation carrier transport by polarization control over Schottky barriers. However, for decade, obtaining direct, comprehensive experimental evidence has remained scarce. Here, we report an approach to experimentally demonstrate origin ferroelectric using planar van der Waals α-In2Se3 memristors. Through rational interfacial engineering, their initial barrier heights screening charges at both terminals can be delicately manipulated. This enables us find that is determined three independent variables: polarization, variation, height, opposed generally reported explanation. Inspired these findings, volatile with large on/off ratios above 104. Our work extended other long-channel vertical ultrashort-channel reveal regimes improve performances.