Localized interlayer excitons in MoSe2–WSe2 heterostructures without a moiré potential

• DOI: 10.1038/s41467-022-33082-6
• Publication Date: 2022-09-12T14:03:56Z
• Authors: Fateme Mahdikhany...; Daniel N. Shanks; Matthew Klein; Qian Wang; Michael R. Koehler; David G. Mandrus; Takashi Taniguchi; Kenji Watanabe; Oliver L. A. Monti; Brian J. LeRoy; John R. Schaibley
• Keywords: Moiré pattern

Abstract Interlayer excitons (IXs) in MoSe 2 –WSe heterobilayers have generated interest as highly tunable light emitters transition metal dichalcogenide (TMD) heterostructures. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature been attributed to IXs localized by the moiré potential between TMD layers. We show that IX PL are present even when is suppressed inserting a bilayer hexagonal boron nitride (hBN) spacer compare doping, electric field, magnetic and dependence directly contacted region those separated hBN. The similar for both regions, but their excitonic g-factors opposite signs, indicating origin not potential.