Direct bandgap quantum wells in hexagonal Silicon Germanium

• DOI: 10.1038/s41467-024-49399-3
• Publication Date: 2024-06-19T15:01:59Z
• Authors: Wouter H. J. Peeters; Victor T. van Lange; Abderrezak Belabbes; Max C. van Hemert; Marvin Marco Jansen; Riccardo Farina; Marvin A. J. van ...; Marcel A. Verheijen; Silvana Botti; Friedhelm Bechstedt; Jos. E. M. Haverkort; Erik P. A. M. Bak...
• Keywords: Wide-bandgap semiconductor

Abstract Silicon is indisputably the most advanced material for scalable electronics, but it a poor choice as light source photonic applications, due to its indirect band gap. The recently developed hexagonal Si 1− x Ge semiconductor features direct bandgap at least > 0.65, and realization of quantum heterostructures would unlock new opportunities optoelectronic devices based on SiGe system. Here, we demonstrate synthesis characterization wells realized in Photoluminescence experiments hex-Ge/Si 0.2 0.8 confinement hex-Ge segment with type-I alignment, showing emission up room temperature. Moreover, tuning range well energy can be extended using /Si y additional well. These experimental findings are supported ab initio bandstructure calculations. A alignment pivotal development novel low-dimensional emitting alloys, which have been out reach this system until now.