Robust formation of amorphous Sb2S3 on functionalized graphene for high-performance optoelectronic devices in the cyan-gap

• DOI: 10.1038/s41598-020-70879-1
• Publication Date: 2020-09-10T10:03:14Z
• Authors: Ju-Hung Chen; Sheng-Kuei Chiu; Jin-De Luo; Shu-Yu Huang; Hsiang-An Ting; Mario Hofmann; Ya-Ping Hsieh; Chu-Chi Ting
• Keywords: Cyan

Abstract Despite significant progress in the fabrication and application of semiconductor materials for optical emitters sensors, few can cover cyan-gap between 450 500 nm. We here introduce a robust facile method to deposit amorphous Sb 2 S 3 films with bandgap 2.8 eV. By exploiting tunable functionality graphene, two-dimensional material, efficient deposition from chemical was achieved. Ozone-generated defects graphene were shown be required enhance morphology quality material comprehensive characterization seed layer film applied design an optimal process. The resulting exhibits carrier transport high photodetector performance as evidenced by unprecedented responsivity detectivity semiconductor/graphene/glass vertical heterostructures. (112 A/W, 2.01 × 10 12 Jones, respectively).