Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires

• DOI: 10.1038/srep03603
• Publication Date: 2014-01-08T10:02:51Z
• Authors: Filippo Fabbri; Enzo Rotunno; Laura Lazzarini; Naoki Fukata; Giancarlo Salviati
• Keywords: Wurtzite crystal structure; Cathodoluminescence; Light emission; Microelectronics

Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits efficiency as a light emitter. Here we show emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV and near infra-red 0.8 correlate respectively direct transition Γ point band-gap silicon. We find additional intense emissions due boron intra-gap states short wavelength range. present evolution function doping concentration growth