Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier

• DOI: 10.1038/srep03835
• Publication Date: 2014-01-23T10:04:12Z
• Authors: Qiang Li; Ting-Ting Shen; Yan-Ling Cao; Kun Zhang; Shi-Shen Yan; Yu-Feng Tian; Shi-Shou Kang; Ming-Wen Zhao; You-Yong Dai; Yan-Xue Chen; Guo-Lei Liu; Liang-Mo Mei; Xiao-Lin Wang; Peter Grünberg
• Keywords: Tunnel magnetoresistance; Barrier layer

Abstract The spin memristive devices combining memristance and tunneling magnetoresistance have promising applications in multibit nonvolatile data storage artificial neuronal computing. However, it is a great challenge for simultaneous realization of large one nanoscale junction, because very hard to find proper spacer layer which not only serves as good insulating but also easily switches between high low resistance states under electrical field. Here we firstly propose use nanon composite barrier layers CoO-ZnO fabricate the Co/CoO-ZnO/Co magnetic tunnel junctions. bipolar switching ratio up 90 TMR state gets 8% at room temperature, leads three states. explained by metal-insulator transition CoO 1−v due migration oxygen ions ZnO .