Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

• DOI: 10.1038/srep04203
• Publication Date: 2014-02-26T10:08:31Z
• Authors: C. Maragliano; S. Lilliu; M. S. Dahlem; M. Chiesa; T. Souier; M. Stefancich
• Keywords: Charge carrier; Scanning Probe Microscopy; Volta potential

In the last years there has been a renewed interest for zinc oxide semiconductor, mainly triggered by its prospects in optoelectronic applications. particular, thin films are being widely used photovoltaic applications, which determination of electrical conductivity is great importance. Being an intrinsically doped material, quantification doping concentration always challenging. Here we show how to probe charge carrier density Scanning Kelvin Probe Microscopy, technique that allows measuring contact potential difference between tip and sample surface with high spatial resolution. A simple electronic energy model correlating material. Limitations this discussed details some experimental solutions proposed. Two-dimensional images acquired on radio frequency-sputtered intrinsic different thickness deposited under conditions reported. We results inferred accordance expected obtained from resistivity mobility measurements.