Lattice Distortion in In3SbTe2 Phase Change Material with Substitutional Bi

• DOI: 10.1038/srep12867
• Publication Date: 2015-08-11T09:14:08Z
• Authors: Minho Choi; Heechae Choi; Seungchul Kim; Jinho Ahn; Yong Tae Kim
• Keywords: Phase-change memory; Lattice (music); Atmospheric temperature range; Phase-change material

Abstract Sb atoms in In 3 SbTe 2 (IST) are partially substituted by 3.2–5.5 at.% of Bi atoms. As a result, the NaCl crystal structure IST is slightly distorted. The distorted inter-planar angles observed with fast Fourier transformation lattice images within maximum range interplanar calculated density functional theory. When content increased, crystallization temperature becomes relatively lower than that IST, activation energy decreases from 5.29 to 2.61 eV and specific heat melting point obviously reduced. Consequently, phase change random access memory (PRAM) fabricated Bi-doped (Bi-IST) can operate power consumption pure PRAM. set reset speeds PRAM cells Bi-IST both 100 ns 5.5 Bi, which faster switching Ge Te 5 (GST). These experimental results reveal speed closely related thermal properties structure.