Strain induced piezoelectric effect in black phosphorus and MoS2 van der Waals heterostructure

• DOI: 10.1038/srep16448
• Publication Date: 2015-11-10T09:22:53Z
• Authors: Le Huang; Yan Li; Zhongming Wei; Jingbo Li
• Keywords: Strain (injury); Electron Mobility

Abstract The structural, electronic, transport and optical properties of black phosphorus/MoS 2 (BP/MoS ) van der Waals (vdw) heterostructure are investigated by using first principles calculations. band gap BP/MoS bilayer decreases with the applied normal compressive strain a semiconductor-to-metal transition is observed when more than 0.85 Å. also exhibits modulation its carrier effective mass concentration strain, suggesting that mobility engineering good piezoelectric effect can be realized in heterostructure. Because type-II alignment facilitate separation photo-excited electrons holes it benefit from great absorption coefficient ultra-violet region, shows potential to very efficient photodetector.