Solution-Processible Crystalline NiO Nanoparticles for High-Performance Planar Perovskite Photovoltaic Cells

• DOI: 10.1038/srep30759
• Publication Date: 2016-07-28T08:06:37Z
• Authors: Uisik Kwon; Bong-Gi Kim; Duc Cuong Nguyen; Jong-Hyeon Park; Na Young Ha; Seung-Joo Kim; Seung Hwan Ko; Soonil Lee; Daeho Lee; Hui Joon Park
• Keywords: Non-blocking I/O; Open-circuit voltage

Abstract In this work, we report on solution-based p-i-n-type planar-structured CH 3 NH PbI perovskite photovoltaic (PV) cells, in which precrystallized NiO nanoparticles (NPs) without post-treatment are used to form a hole transport layer (HTL). X-ray diffraction and high-resolution transmission electron microscopy showed the crystallinity of NPs, atomic force scanning confirmed uniform surfaces resultant thin film subsequent photoactive layer. Compared conventional poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL, HTL had excellent energy-level alignment with that improved electron-blocking capability, as analyzed by photoelectron spectroscopy diode modeling, resulting V oc ~0.13 higher than PEDOT:PSS-based devices. Consequently, power conversion efficiency (PCE) 15.4% high fill factor ( FF , 0.74), short-circuit current density J sc 20.2 mA·cm −2 ), open circuit voltage 1.04 V) having negligible hysteresis superior air stability has been achieved.