The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film

• DOI: 10.1038/srep32931
• Publication Date: 2016-09-09T11:32:48Z
• Authors: Takao Shimizu; Kiliha Katayama; Takanori Kiguchi; Akihiro Akama; Toyohiko J. Konno; Osami Sakata; Hiroshi Funakubo
• Keywords: 0103 physical sciences; 01 natural sciences; Article

Abstract Ferroelectricity and Curie temperature are demonstrated for epitaxial Y-doped HfO 2 film grown on (110) yttrium oxide-stabilized zirconium oxide (YSZ) single crystal using Sn-doped In O 3 (ITO) as bottom electrodes. The XRD measurements enabled us to investigate its detailed structure including orientations of the film. ferroelectricity was confirmed by electric displacement filed – hysteresis measurement, which revealed saturated polarization 16 μC/cm . Estimated spontaneous based obtained saturation analysis 45 This value is first experimental estimations in good agreement with theoretical from principle calculation. also estimated be about 450 °C. study strongly suggests that -based materials promising various ferroelectric applications because their comparable properties conventional together reported excellent scalability thickness compatibility practical manufacturing processes.