Voltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions

• DOI: 10.1038/srep42511
• Publication Date: 2017-02-17T10:07:11Z
• Authors: Katsuya Miura; Shin Yabuuchi; Masaki Yamada; Masahiko Ichimura; Bivas Rana; Susumu Ogawa; Hiromasa Takahashi; Yasuhiro Fukuma; Yoshichika Otani
• Keywords: Magnetization dynamics; Micromagnetics; Tunnel magnetoresistance

Abstract Recent progress in magnetic tunnel junctions (MTJs) with a perpendicular easy axis consisting of CoFeB and MgO stacking structures has shown that magnetization dynamics are induced due to voltage-controlled anisotropy (VCMA), which will potentially lead future low-power-consumption information technology. For manipulating magnetizations MTJs by applying voltage, it is necessary understand the coupled motion two (recording reference) layers. In this report, we focus on layers top an in-plane bottom axis, both having anisotropy. According rectified voltage ( V rec ) measurements, amplitude depends initial angles respect VCMA direction. Our numerical simulations involving micromagnetic method based Landau-Lifshitz-Gilbert equation indicate combination transferred angular momentum, even though axes different. study development controlling angle between directions.